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inchange semiconductor product specification silicon pnp power transistors 2SB1160 description ? ? with to-3pfa package ? complement to type 2sd1715 ?high f t ? satisfactory linearity of h fe ? wide area of safe operation applications ? for high power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -9 a i cp collector current-peak -15 a t c =25 ?? 100 p c collector power dissipation 3 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB1160 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-7a ;i b =-0.7a -2.0 v v be base-emitter on voltage i c =-7a ; v ce =-5v -1.8 v i cbo collector cut-off current v cb =-150v; i e =0 -50 | a i ebo emitter cut-off current v eb =-3v; i c =0 -50 | a h fe-1 dc current gain i c =-20ma ; v ce =-5v 20 h fe -2 dc current gain i c =-1a ; v ce =-5v 60 200 h fe -3 dc current gain i c =-7a ; v ce =-5v 20 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 330 pf f t transition frequency i c =-0.5a ; v ce =-5v 20 mhz ? h fe-2 classifications q s p 60-120 80-160 100-200
inchange semiconductor product specification 3 silicon pnp power transistors 2SB1160 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.30mm)
inchange semiconductor product specification 4 silicon pnp power transistors 2SB1160

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